| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multi-level storage type nonvolatile storage device in which the increase of circuit scale is suppressed to the minimum, highly accurate write, read, and erase operations can be performed in a short period of time. <P>SOLUTION: In a process in accordance with input of a read command, data are read from the prescribed nonvolatile memory cell, and data are outputted to the outside in accordance with a first clock signal. In a process in accordance with input of a write command, data are inputted from the outside in accordance with the first clock signal, data are written into the prescribed nonvolatile memory cell, and writing of the data is performed by using a second clock signal. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
