| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus or the like which can form a Ti silicide film having a more flat and uniform boundary face with an underlying, and can form a contact with lower resistance as a result. SOLUTION: The substrate processing apparatus 100 is provided with a first common conveyance chamber 102 connected to processing chambers 104A-104D in common, and a second common conveyance chamber 120 connected to processing chambers 104E and 104F. The processing chambers 104E, 104F, 104A, 104C, and 104B are provided as a COR processing chamber wherein foreign matters including a natural oxide film on an Si wafer and gas element are chemically reacted with each other to produce a product, a PHT processing chamber to remove the product generated on the Si wafer by heating, a Ti film formation chamber to form a Ti film on the Si surface of the Si wafer, a silicide formation chamber to cause silication reaction between the Ti film and the base so as to form a Ti silicide film, and a TiN film formation chamber to form a TiN film on the Ti silicide film. COPYRIGHT: (C)2007,JPO&INPIT
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