| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high sensitivity photosensitive resin composition of which decrease in the film thickness is small, which is superior in film thickness uniformity in a wafer after development and in film thickness uniformity after curing, and with which a heat-resistant relief structure can be manufactured, and to provide a method of manufacturing a semiconductor device that uses the composition. <P>SOLUTION: The photosensitive resin composition comprises a polybenzoxazole precursor (A) containing a naphthoquinone-diazide group, a naphthoquinone-diazide photosensitive agent (B), and a compound containing a specific phenolic hydroxyl (C). A method of manufacturing the semiconductor device that uses the composition is also disclosed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
