Electron beam dosage computing method for e.g. electron beam lithographic device, involves utilizing parameter values to create illustration of basic dosages of beams and to prepare illustration of proximity effect correction coefficients

摘要

The method involves determining corrected parameter values for corrections of pattern line width deviations in a region. The values are utilized to create an illustration of basic dosages of particle beams of an electron beam (58) and to prepare an illustration of proximity effect correction coefficients in two regions. The illustrations are utilized to determine two corrected dosages of the beams to correct the proximity effects in a third region. The two dosages are utilized to determine an actual electron beam dosage in respective positions on a surface of a work piece (38). Independent claims are also included for the following: (1) a recording method for recording a pattern using loaded particle beams (2) a recording medium in which a treatment procedure is stored in a computer readable and executable form (3) a recording device for recording a pattern by using loaded particle beams.