| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film capacitor capable of preventing the oxidization of a lower electrode, preventing a defect at a boundary face between the lower electrode and a dielectric layer, and securing a BDV property, and to provide a printed-circuit substrate in which the thin film capacitor is built. SOLUTION: The method of manufacturing a thin film capacitor comprises steps of carrying out the recrystallization and the heat treatment of a metallic wheel, forming a dielectric layer on the upper portion of the recrystallized and heat-treated metallic wheel, carrying out the heat treatment of the metallic wheel and the dielectric layer, and forming an upper electrode on the upper portion of the heat-treated dielectric film. In this case, since the recrystallization is carried out at a low temperature in a short time, the recrystallization of the metallic wheel is carried out while preventing the oxidation of the metallic wheel. Thus, the high-temperature heat treatment of the dielectric film is made possible. This improves the electric property of the thin film capacitor and the reliability of a product. COPYRIGHT: (C)2007,JPO&INPIT
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