| 发明名称 |
Method to detect photoresist residue on a semiconductor device |
| 摘要 |
A method for detecting photoresist residue during semiconductor device manufacture includes developing photoresist on a surface of a semiconductor device to expose portions of the surface A plurality of etch paths are then partially etched into the surface and inspected to determine their depths.
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| 申请公布号 |
US7205167(B2) |
申请公布日期 |
2007.04.17 |
| 申请号 |
US20040842178 |
申请日期 |
2004.05.10 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN TO-YU;LI MEI-YEN;HSU YUNG-LUNG |
| 分类号 |
H01L21/66;G03F7/20;H01L21/027 |
主分类号 |
H01L21/66 |
| 代理机构 |
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代理人 |
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