发明名称 Semiconductor memory device having repeaters located at the global input/output line
摘要 A semiconductor memory device includes a repeater located at a global input/output (GIO) line. The repeater buffers and transmits data between a data pad and a plurality of banks. The semiconductor memory device also includes a repeater control unit adapted to control the operation of the repeater in response to a read/write command associated with one of the plurality of banks. When a read or write operation is performed for the banks located farthest from the data pads, the repeater on the GIO line buffers the GIO signal, and thereby reduces the load of the GIO line, decreases the delay of the GIO signal, and improves the slope of the GIO signal. As a result, the semiconductor memory device is useful during high speed operations.
申请公布号 US7206213(B2) 申请公布日期 2007.04.17
申请号 US20020329631 申请日期 2002.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM MI YOUNG
分类号 G11C5/06;G11C7/00;G11C7/10;H04B3/36 主分类号 G11C5/06
代理机构 代理人
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