SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device having a field effect transistor. The field effect transistor is provided with a gate insulating film (2) formed on a semiconductor layer (1), and a gate electrode (5) formed on the gate insulating film (2). The gate insulating film (2) is a silicon oxide film containing a metal element (4) and nitrogen (3), and the characteristics of the silicon oxide film are modified by adding the metal element (4) and the nitrogen (3). The concentration distribution of the metal element (4) and the nitrogen (3) in the gate insulating film (2) becomes maximum on the side of an interface between the gate insulating film (2) and the gate electrode (5) and gently reduces as it comes close to the semiconductor layer (1).