发明名称 SILICON NITRIDE WIRING BOARD AND ITS PRODUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a silicon nitride wiring board of high productivity, high strength, high heat conduction, and high flexibility without tightening manufacturing conditions; and to provide a highly reliable silicon nitride wiring board of low heat resistance. SOLUTION: In the silicon nitride wiring board 1, a wiring circuit pattern 13 consisting of a metal is joined to a surface of a silicon nitride substrate 11 formed of a silicon nitride sintered body by a brazing material, and a plating layer is formed in the surface of the wiring circuit pattern 13. The surface roughness Rz of the silicon nitride substrate 11 is more than 3μm and less than or equal to 20μm. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007088196(A) 申请公布日期 2007.04.05
申请号 JP20050274973 申请日期 2005.09.22
申请人 HITACHI METALS LTD 发明人 IMAMURA TOSHIYUKI;KAGA YOICHIRO;KIKUCHI HIROMI;WATANABE JUNICHI
分类号 H05K3/18;C23C18/18;H05K3/24 主分类号 H05K3/18
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