| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition superior in resolution, line edge roughness and an etching speed ratio in the resist composition and a pattern forming method using it used in a semiconductor manufacturing process such as an IC, manufacture of a circuit board such as a liquid crystal and a thermal head, further the other photo-fabrication process and the like, and to provide the pattern forming method using it. <P>SOLUTION: The resist composition contains (A) a resin for increasing solubility to an alkali developer due to the action of an acid containing a repeating unit having a lactone group and a naphthalene ring, and (B) a compound generating the acid due to irradiation with an active light or radiation. The pattern forming method using it is provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
