REFLECTIVE LAYERED SYSTEM COMPRISING A PLURALITY OF LAYERS THAT ARE TO BE APPLIED TO A III-V COMPOUND SEMICONDUCTOR MATERIAL

摘要

The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.