发明名称 Spin-injection FET
摘要 An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
申请公布号 US7200037(B2) 申请公布日期 2007.04.03
申请号 US20050255101 申请日期 2005.10.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAITO YOSHIAKI;SUGIYAMA HIDEYUKI;INOKUCHI TOMOAKI
分类号 G11C11/00 主分类号 G11C11/00
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