| 摘要 |
PROBLEM TO BE SOLVED: To reduce the interface level of an MOS interface and a defect in a gate oxide film and obtain a high-quality gate insulating film. SOLUTION: A semiconductor layer 2 is formed on a substrate 1. Then, a first gate oxide film 3 is thinly formed by a plasma CVD method. Then, a second gate oxide film 4 is formed on the first gate oxide film 3 in a state that a substrate temperature is set to be higher than that when the first gate oxide film 3 is formed. Since the first gate oxide film generated in a state that the substrate temperature is relatively low has a reduced interface level of a MOS interface and the second gate oxide film generated in a state that the substrate temperature is relatively has reduced defects in the oxide film, the gate oxide film comprising the first and the second gate oxide films 3 and 4 has the reduced interface level of the MOS interface and becomes the gate oxide film having the reduced defects in the gate oxide film and the high-quality gate oxide film can be formed. COPYRIGHT: (C)2007,JPO&INPIT
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