| 摘要 |
Provided is a CMOS image sensor and method of manufacturing same. The CMOS image sensor includes a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor. A device isolation layer is formed on a first conductive type substrate. Gate electrodes of the transfer transistor, the reset transistor, the drive transistor, and the select transistor are formed on an active region of the substrate with gate insulating layers interposed therebetween. A first diffusion region is formed of a second conductive type in a first region of the active region, where the first region does not include a floating diffusion region between the transfer transistor and the reset transistor and the photodiode region. A second diffusion region is formed of the second conductive type in the floating diffusion region at a concentration lower than that of the second conductive type first diffusion region.
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