| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a stereoscopic structure capable of being easily manufactured and loaded with a high function with a small area, and to provide a method of manufacturing the same. <P>SOLUTION: There is provided a semiconductor device 10 having a silicon oxide film 2 of a stereoscopic structure formed so as to be partially floated from a surface of a substrate 1 on the substrate 1 composed of a silicon (Si) semiconductor. For example, a resistive element and a capacitive element are formed on the silicon oxide film 2 of the stereoscopic structure, and by forming these elements into the stereoscopic structure, a large resistive value and capacitive value can be loaded with a small area, compared to the resistive element and the capacitive element of a planar structure. In addition, the stereoscopic structure is formed, with the silicon oxide film 2 partially floated from the surface of the silicon substrate 1, and this semiconductor device 10 can be easily manufactured by using hydrogen annealing treatment. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
