METHOD FOR BILAYER RESIST PLASMA ETCH

摘要

A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl₄ gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl₄ gas. Then the bilayer resist is etched.