| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent or inhibit deterioration of luminance caused by point defect generated in a p-type doping layer, in a group II-VI light emitting element wherein an active layer is formed between the p-type doping layer and an n-type doping layer. <P>SOLUTION: In a method for applying voltage to group II-VI light emitting element, after an operating voltage for making the light emitting element 1 emit light is applied to the light emitting element 1, the applied voltage to the light emitting element 1 is decreased to an inoperating voltage stopping emission of the light emitting element 1 by an operating voltage decreasing means 21. Then, by applying the operating voltage, point defect is diffused from the p-type doping layer 114 to the active layer 15 of the light emitting element 1 to prevent or inhibit generation of a dark spot DS on a light emitting surface in the active layer 15. After decreasing the applied voltage down to the inoperating voltage stopping emission of the light emitting element 1 by the operating voltage decreasing means 21, the applied voltage to the light emitting element 1 is increased up to the operating voltage by making the light emitting element 1 emit by a re-operating means 22 to make the light emitting element 1 re-emit right. <P>COPYRIGHT: (C)2007,JPO&INPIT |
