GaN-BASE SEMICONDUCTOR LIGHT EMITTING ELEMENT, LUMINESCENT DEVICE, IMAGE DISPLAY DEVICE, PLANAR LIGHT SOURCE DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE ASSEMBLY

摘要

This invention provides a GaN-base semiconductor light emitting element comprising (A) an n conductivity-type first GaN-base compound semiconductor layer (13), (B) an active layer (15) having a multiple quantum well structure comprising a well layer and a barrier layer for separating well layers from each other, and (C) a p conductivity-type second GaN-base compound semiconductor layer (17). The well layer in the active layer (15) is disposed so as to satisfy d₁ < D₂ wherein d₁ represents the well layer density on the first GaN-base compound semiconductor layer side in the active layer (15) and d₂ represents the well layer density on the second GaN-base compound semiconductor layer side.