BACK-ILLUMINATED IMAGING DEVICE AND METHOD OF FABRICATING SAME

摘要

A method for fabricating a back-illuminated semiconductor-imaging device, comprising the steps of providing a substrate comprising a mechanical substrate (25), an insulator layer (20), and a semiconductor substrate (15); applying one or more dopants (95) to the semiconductor substrate (15); growing an epitaxial layer (30) on the semiconductor substrate (15) while simultaneously causing diffusion of the one or more dopants (95) into the epitaxial layer (30) such that, at completion of the growing of the epitaxial layer (30), there exists a net dopant concentration profile (40) in the semiconductor substrate (15) and the epitaxial layer (30) which has an initial maximum value at an interface (35) of the semiconductor substrate (15) and the insulator layer (20) and which decreases monotonically with increasing distance from the interface within an initial portion of the semiconductor substrate (15) and the epitaxial layer (30), and fabricating one or more imaging components (45) in the epitaxial layer (30).