| 摘要 |
<p>Trench semiconductor device comprises at least one trench (30) with an electrode arrangement (50) and many electrically isolated field electrode units (FP1-FP4). Pairs of units (FPj,FPj+1) are adjacent with a common border and have differently strong pair-wise electrical coupling between them. Different field electrode units with differently strong electrical coupling to the semiconductor material (20) are formed outside the trench. An independent claim is also included for a further trench semiconductor device.</p> |
