发明名称 MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a memory which can suppress erasure of data in a memory cell by accumulated disturbance. SOLUTION: This memory includes a memory cell 21 and a refresh control circuit 3 to perform rewrite to the memory cell 21. The refresh control circuit 3 performs read and rewrite to the memory cell 21 when falling down of power supply. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007058969(A) 申请公布日期 2007.03.08
申请号 JP20050241943 申请日期 2005.08.24
申请人 SANYO ELECTRIC CO LTD 发明人 MIYAMOTO HIDEAKI;MATSUSHITA SHIGEHARU
分类号 G11C11/22 主分类号 G11C11/22
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