CERIUM OXIDE POWDER FOR ONE-COMPONENT CMP SLURRY, PREPARATION METHOD THEREOF, ONE-COMPONENT CMP SLURRY COMPOSITION COMPRISING THE SAME, AND METHOD OF SHALLOW TRENCH ISOLATION USING THE SLURRY

摘要

Cerium oxide powder for one-component CMP(chemical mechanical polishing) slurry as a polishing agent is provided to increase selective ratio of polishing rates of silicon oxide film/silicon nitride film, to show high pore fraction and to produce the one-component CMP slurry composition with excellent polishing rate and selectivity by preparing the cerium oxide powder through baking, selectively crushing and firing processes. The cerium oxide powder has specific surface area of more than 5m^2/g, pores of more than 3nm and another pores of less than 3nm in a relative raito by volume of both pores ranging from 8:2 to 2:8. The powder has a crystallite size of 10 to 60nm, average particle size of 50nm to 1 micrometer and largest particle size of less than 3 micrometers. The powder includes steps of: baking cerium carbonate at 200 to 400deg.C for 6 to 100 hours; and calcining the baked product at 600 to 1200deg.C for 30 minutes to 6 hours. The cerium oxide powder is used as a polishing agent to produce one-component CMP slurry composition including the polishing agent, a dispersant and water.