发明名称 |
Silicon precursors for deep trench silicon etch processes |
摘要 |
The present invention relates to etch chemistry and methods for the etching of silicon substrates. The method is particularly useful for deep trench etching of silicon substrates and produces a trench having a high aspect ratio. In this type of deep trench etching, control of the profile of the trench is addressed by the etch chemistry disclosed herein. The etchant described in the present invention comprises silicon and a halogen component, and may be gaseous, liquid or solid. The etchant disclosed is also substantially free of hydrogen and carbon.
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申请公布号 |
US7186660(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20030338964 |
申请日期 |
2003.01.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PANDA SIDDHARTHA;WISE RICHARD S. |
分类号 |
H01L21/302;H01L21/3065;H01L21/8242 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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