SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of introducing high density impurity into a very shallow region from the surface of a silicon substrate. SOLUTION: The manufacturing method of a semiconductor device forms a shallow junction source/drain region on both sides of a gate structure in a direction of a gate length, the gate structure including a predetermined shape gate insulating film 4 and a gate electrode 5 formed at predetermined positions on a p-type silicon substrate 1. The method comprises an etching process of etching a formation region of the source/drain region to a predetermined depth; a30Si layer formation process of depositing a30Si layer of a predetermined composition on the p-type silicon substrate 1, and subjecting a30Si layer 21 to selective epitaxial growth into the formation region of the source/drain region; and a neutron radiation irradiation process of irradiating neutron radiation 50 to the p-type silicon substrate 1 to form31P of predetermined concentration in the30Si layer 21. COPYRIGHT: (C)2007,JPO&INPIT