| 摘要 |
A single crystal CVD diamond plate having major surfaces on opposite sides thereof. The mean dislocation direction of the diamond plate is orientated in a direction offset from the normal to at least one of the major surface. Also disclosed is a method of producing said single crystal diamond by growing the diamond on a substrate substantially free of surface defects by chemical vapour deposition. The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond. |
