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发明名称
Method for forming insulation layer of semiconductor device
摘要
申请公布号
KR100680941(B1)
申请公布日期
2007.02.08
申请号
KR20010022948
申请日期
2001.04.27
申请人
发明人
分类号
H01L21/31
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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