发明名称 |
COMPOSITION FOR FORMING SILICA-BASED COATING, SILICA-BASED COATING, AND METHOD FOR FORMING SILICA-BASED COATING, AS WELL AS SEMICONDUCTOR DEVICE EQUIPPED WITH SILICA-BASED COATING |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a silica-based coating that is excellent in low dielectric property and can release a substituent group to be eliminated in a shorter heating time as compared to a conventional one, to provide a silica-based coating comprised of the composition and a method for forming the same, as well as to provide a semiconductor device provided with the silica-based coating. SOLUTION: The composition for forming a silica-based coating comprises a siloxane resin having a Si atom combined with both of a substituent group releasable at a predetermined temperature and a substituent group not releasable at a predetermined temperature, and a solvent that can dissolve the siloxane resin. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007031596(A) |
申请公布日期 |
2007.02.08 |
申请号 |
JP20050217936 |
申请日期 |
2005.07.27 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
YOSHIKAWA TAKAHIRO;SAKURAI HARUAKI;ABE KOICHI |
分类号 |
C09D183/04;B05D3/02;B05D7/24;B32B9/00;C09D7/12;H01L21/312;H01L21/316;H01L21/768 |
主分类号 |
C09D183/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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