METHOD OF FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE AND RESULTANT STRUCTURE

摘要

A method for forming a contact hole of a semiconductor device and its structure are provided to prevent a gate line from being excessively etched by using a gate protection layer. A gate line(32) and source/drain regions(33) are formed on a silicon substrate(30). An etch stop layer(35) is deposited on the substrate. A first interlayer dielectric(36a) is deposited on the etch stop layer and planarized until the etch stop layer is exposed to the outside. The exposed etch stop layer is removed. A gate protection layer(38) is formed on the gate line. A second interlayer dielectric(36b) is formed on the resultant structure. Contact holes are formed on the resultant structure by using an etching process. At this time, the gate line is protected by the gate protection layer.