| 摘要 |
PROBLEM TO BE SOLVED: To provide an effective and controllable method capable of compensating a critical dimension (CD) variation in a semiconductor wafer under an ion implantation process. SOLUTION: The method for uniformizing the ion implantation process includes a step of measuring the critical dimension (CD) variation in the semiconductor wafer, a step of moving the semiconductor wafer to the ion implantation process in a secondary mode, and a step of controlling the moving speed of the semiconductor wafer so that an implantation dose quantity to the semiconductor wafer is changed on the basis of the variation of the CD. COPYRIGHT: (C)2010,JPO&INPIT |
