PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a photomask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the same.

SOLUTION: A light shielding film 12 against exposure light is disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The film is designed in such a manner that the total film thickness of the light shielding film is 100 nm or less and that the film thickness of a chromium compound having optical density (OD) of 0.025 nm-1or less per unit film thickness with respect to light at 450 nm wavelength possesses 70% or more of the total film thickness. In order to use the photomask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 nm or 248 nm wavelength.

COPYRIGHT: (C)2007,JPO&INPIT