| 摘要 |
PROBLEM TO BE SOLVED: To reduce on-resistance at forward bias while improving breakdown strength by reducing an electric field on a Schottky junction. SOLUTION: The semiconductor rectifier element comprises an n-type SiC epitaxial layer 2 formed on an n-type SiC substrate 1, a trench 3 formed on the SiC epitaxial layer 2, a p-type field relaxing layer 4 formed on the SiC epitaxial layer 2 positioned at the bottom of the trenches 3, a first Schottky electrode 5 which is Schottky-jointed to the upper surface of the SiC epitaxial layer 2 between adjoining trenches 3, a second Schottky electrode 6 which is Schottky-jointed to the side wall of the trench 3, and a cathode electrode 7 formed on the rear side of the SiC substrate 1. Since a difference between the barrier height of the first Schottky electrode 5 and the barrier height of the second Schottky electrode 6 is made smaller than the difference of barrier heights when both the electrodes of the same material in the same process are formed, the on-resistance is further reduced. COPYRIGHT: (C)2007,JPO&INPIT |
