发明名称 |
Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus |
摘要 |
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
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申请公布号 |
US2007030604(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20060543210 |
申请日期 |
2006.10.05 |
申请人 |
NAKATANI RYOICHI;KITADA MASAHIRO;TAKANO HISASHI;TANABE HIDEO;SHIMIZU NOBORU |
发明人 |
NAKATANI RYOICHI;KITADA MASAHIRO;TAKANO HISASHI;TANABE HIDEO;SHIMIZU NOBORU |
分类号 |
G11B5/127;G01R33/09;G11B5/39;H01F10/32;H01L43/08 |
主分类号 |
G11B5/127 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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