| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for forming an n-channel MOSFET of sufficiently large on-current on an SOS substrate. SOLUTION: A silicon epitaxial layer of the SOS substrate is provided with a channel formation part 121 which is of p-type and has hexahedron structure, and a gate oxide film 125 and a gate electrode 131 are provided on both sides of the channel formation part 121. Thus, a channel can be formed along both sides of the channel formation part 121. In the SOS substrate 110, a compression stress that is parallel to a surface occurs in the silicon epitaxial layer 112 at manufacturing. If a channel is formed along the upper surface of the channel formation part 121, mobility of electron becomes smaller. Since a tensile stress occurs in the direction vertical to the surface of the silicon epitaxial layer 112, the mobility of electron can be larger for forming a channel along the side of the channel formation part 121, resulting in a larger on current. COPYRIGHT: (C)2007,JPO&INPIT
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