| 摘要 |
A method for fabricating a semiconductor device is provided to suppress collapse of patterns due to a high aspect ratio in a bit line forming process by performing an etch process after reforming a photosensitive layer pattern. A bit line barrier metal(160), a bit line(170), and a hard mask(180) are sequentially laminated on a semiconductor substrate. A first photosensitive layer pattern is formed on the hard mask in order to form a hard mask pattern(200). A second photosensitive layer pattern(210) is formed on the hard mask pattern. A lower lamination structure is etched by using the second photosensitive layer pattern as a mask. The second photosensitive layer pattern is removed. A gap between the hard mask patterns is filled with an interlayer dielectric. A bit line is formed by etching the lower lamination structure. A spacer is formed on a sidewall of the bit line. A planarized interlayer dielectric is formed on the entire surface of the semiconductor substrate.
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