发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a protection circuit against electrostatic discharge and electrical over stress. SOLUTION: The protection circuit against electrostatic discharge and electrical over stress is provided. The circuit includes a first transistor including a substrate. An internal predetermined voltage source biases the substrate of the first transistor. The internal predetermined voltage source is greater than or equal to a voltage provided to a source of the first transistor and isolates a substrate voltage of the first transistor from a supply voltage of the circuit. A first resistor is coupled to a gate of the first transistor and ground. The circuit also includes a zener diode coupled between ground and the supply voltage of the circuit. The zener diode shorts to ground if the supply voltage of the circuit exceeds the breakdown voltage of the zener diode. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007013952(A) |
申请公布日期 |
2007.01.18 |
申请号 |
JP20060167127 |
申请日期 |
2006.06.16 |
申请人 |
AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE LTD |
发明人 |
TEO CHEE KEONG;ASUNCION JOHN J;YEO KOK SOON;XU LIAN CHUN;TAI WAI KEAT |
分类号 |
H03K19/003;H01L21/822;H01L27/04 |
主分类号 |
H03K19/003 |
代理机构 |
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