发明名称 |
GaN-based light emitting-diode chip and a method for producing same |
摘要 |
An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.
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申请公布号 |
US2007012944(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
US20060508504 |
申请日期 |
2006.08.23 |
申请人 |
BADER STEFAN;HAHN BERTHOLD;HARLE VOLKER;LUGAUER HANS-JURGEN;MUNDBROD-VANGEROW MANFRED |
发明人 |
BADER STEFAN;HAHN BERTHOLD;HARLE VOLKER;LUGAUER HANS-JURGEN;MUNDBROD-VANGEROW MANFRED |
分类号 |
H01L27/15;H01L33/00;H01L33/10;H01L33/14;H01L33/32;H01L33/40;H01L33/60;H01L33/62 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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