发明名称 Method for manufacturing CMOS image sensor
摘要 The present invention discloses a method for manufacturing an image sensor which makes the boundaries between microlenses clear by forming a guide layer in advance and can increase the focal distance of light and the quantity of light by forming the spheres of the microlenses to have a constant height.
申请公布号 US7163832(B2) 申请公布日期 2007.01.16
申请号 US20040983990 申请日期 2004.11.08
申请人 MAGNACHIP SEMICONDUCTOR LTD. 发明人 KIM HONG-IK
分类号 H01L21/00;H01L27/146 主分类号 H01L21/00
代理机构 代理人
主权项
地址