发明名称 Method of manufacturing light emitting device
摘要 A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.
申请公布号 US7163836(B2) 申请公布日期 2007.01.16
申请号 US20050036299 申请日期 2005.01.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;HAMADA TAKASHI;SEO SATOSHI
分类号 H01L21/00;H01L51/00;H01L51/40;H01L51/56 主分类号 H01L21/00
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