发明名称 Reducing DQ pin capacitance in a memory device
摘要 A system and method to operate an electronic device, such as a memory chip, with a data driver circuit that is configured to reduce data pin (DQ) capacitance is disclosed. In a driver circuit that is comprised of a set of ODT (On-Die Termination) legs and a set of non-ODT legs, a methodology according to the present disclosure allows selective activation and deactivation of tuning transistors in the ODT and non-ODT legs. During a default operational state of the electronic device (e.g., when no data read operation is taking place), the tuning transistors in the non-ODT legs may be maintained "turned off" or "disabled" to reduce DQ pin capacitance contributed by these tuning transistors had they been active during this default state. These non-ODT leg tuning transistors may be turned on, for example, when a data read operation is to be performed. Similarly, the tuning transistors in the ODT legs also may be selectively enabled/disabled to further control or reduce DQ pin capacitance as desired. The logic circuits disclosed to accomplish the reduction in DQ pin capacitance not only conserve the existing chip real estate, but also do not negatively affect the speed with which signals may be output from the electronic device. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
申请公布号 US2007008788(A1) 申请公布日期 2007.01.11
申请号 US20060493354 申请日期 2006.07.25
申请人 BA BEN 发明人 BA BEN
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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