发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 <p>[PROBLEMS] To provide a means for improving a Q value of an SAW device which uses SH wave type surface acoustic wave. [MEANS FOR SOLVING PROBLEMS] A rotated Y-cut crystal substrate has a cut angle (?) satisfying an inequality of -64.0°&lt;?&lt;-49.3° in a counterclockwise direction from a Z axis. In the surface acoustic wave device, at least one IDT electrode is arranged along a vertical direction (Z' axis direction) of a crystal axis (X) of the crystal substrate, and grating reflectors are arranged on the both sides. A film thickness (H) of the electrode is standardized by an electrode cycle (?) of the IDT electrode to satisfy an inequality of 0.04&lt;H/?&lt;0.12. When a crossing width of the IDT electrode is expressed as (W), the standardized crossing width W/? standardized by the electrode cycle (?) of the IDT electrode satisfies an inequality of 20=W/?=50.</p>
申请公布号 WO2007004661(A1) 申请公布日期 2007.01.11
申请号 WO2006JP313365 申请日期 2006.06.28
申请人 EPSON TOYOCOM CORPORATION;OWAKI, TAKUYA;MORITA, TAKAO 发明人 OWAKI, TAKUYA;MORITA, TAKAO
分类号 H03H9/145;H03H9/25 主分类号 H03H9/145
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