| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the generation of a crack or the like, capable of obtaining a region for the arrangement of wiring or the like which functions as an element in a plurality of interlayer insulating films, and capable of reducing a manufacturing cost. <P>SOLUTION: The semiconductor device is provided with a low dielectric constant film 4 or the like having a dielectric constant k of not more than 2.7. Further, in the low dielectric constant film 4 or the like, materials (a first dummy pattern 10 or the like, a second dummy pattern 12 or the like, for examples) are formed below a pad unit 47 with hardness harder than that of the low dielectric constant film 4 or the like. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
