| 摘要 |
A method is provided of fabricating a thin film resistor semiconductor structure. In one aspect of the invention, the method includes forming a dielectric layer over a semiconductor substrate, forming a thin film resistor on the dielectric layer, and annealing the thin film resistor at a substantially high temperature for a predetermined time period to set the thermal coefficient of resistance of the thin film resistor. A passivation layer is formed over the semiconductor structure.
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