Semiconductor integrated circuit device

摘要

Semiconductor integrated circuit device having an amplifier unit (20) which receives input signals and is constituted by high-voltage MIS transistors of a first conductivity type and a second conductivity type, and a level-shifting unit (50) which receives the output from said amplifier unit and produces a signal of a level that is shifted, wherein said amplifier unit comprises diode-connected high-voltage MIS transistors (221,222) of the second conductivity type; and said level-shifting unit comprises high-voltage MIS transistors (35,36) of the second conductivity type current mirror-connected to said diode-connected high-voltage MIS transistors of the second conductivity type, as well as low-voltage MIS transistors of the first conductivity type (28,31) and of the second conductivity type (37,39).