发明名称 Polycrystalline TFT uniformity through microstructure mis-alignment
摘要 Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions ( 410, 420 ) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.
申请公布号 US7160763(B2) 申请公布日期 2007.01.09
申请号 US20040487170 申请日期 2004.09.10
申请人 THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK 发明人 IM JAMES;VAN DER WILT PAUL CHRISTIAAN
分类号 H01L21/00;H01L21/20;C30B13/00;C30B13/24;C30B29/06;H01L21/336;H01L29/786 主分类号 H01L21/00
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