发明名称 |
Polycrystalline TFT uniformity through microstructure mis-alignment |
摘要 |
Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions ( 410, 420 ) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film. |
申请公布号 |
US7160763(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20040487170 |
申请日期 |
2004.09.10 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
IM JAMES;VAN DER WILT PAUL CHRISTIAAN |
分类号 |
H01L21/00;H01L21/20;C30B13/00;C30B13/24;C30B29/06;H01L21/336;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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