| 摘要 |
The invention relates to methods and devices used to program CBRAM memory cells enabling the cycle endurance to be considerably improved. In one embodiment, the memory cells are always erased prior to a new inscription (steps S3, S4), whereas in a second embodiment, the content of the cell is only modified during overwriting when it is absolutely necessary to alter the bit state. ® KIPO & WIPO 2007
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