| 摘要 |
A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.
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