发明名称 |
MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides |
摘要 |
A method of selectively depositing a ferroelectric thin film on an indium-containing substrate in a ferroelectric device includes preparing a silicon substrate; depositing an indium-containing thin film on the substrate; patterning the indium containing thin film; annealing the structure; selectively depositing a ferroelectric layer by MOCVD; annealing the structure; and completing the ferroelectric device.
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申请公布号 |
US7157111(B2) |
申请公布日期 |
2007.01.02 |
申请号 |
US20030677007 |
申请日期 |
2003.09.30 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LI TINGKAI;HSU SHENG TENG;ULRICH BRUCE DALE |
分类号 |
B05D5/12;C23C16/00;C23C16/02;C23C16/40;C23C16/56;H01L21/316 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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