| 摘要 |
A non-volatile semiconductor memory device and a programming method thereof are provided to stabilize a programming process and to improve the programming speed by maintaining a block gating signal at a constant step-up voltage during the programming process. A memory array(110) is electrically connected to a predetermined bit line(BL) and includes plural memory cells, whose threshold voltages are controlled by cell word lines, which are connected to the respective bit lines. A row decoder(120) supplies a program voltage of a global word line, which corresponds to a selected memory cell, to a corresponding cell word line. A step-up voltage generator(140) generates a step-up voltage higher than the maximum value of the programming voltage. The row decoder includes plural transmission transistors(TTS,TT~TT,TTG) and a step-up voltage switch(121). The transmission transistors supply the voltage of the global word line to the cell word line. The step-up voltage switch is driven to successively supply the step-up voltage to a gate terminal of the transmission transistor during programming and acknowledging processes of the memory cell.
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