METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE

摘要

A method for manufacturing a non-volatile memory device is provided to increase the amount of oxidation in an oxidation process by forming a silicon projection on an upper edge of an active region. A hard mask pattern including a pad oxide layer and a pad nitride layer is formed on a semiconductor substrate(100). A trench(106) is formed by etching an upper part of the semiconductor substrate. The semiconductor substrate is divided into a field region and an active region(109) by forming a field oxide layer(108) for burying the trench. The pad nitride layer is removed from the hard mask pattern. A silicon projection part is formed on an edge part of the active region which is in contact with the trench. The pad oxide layer is removed from the hard mask pattern. A tunnel oxide layer(110) is formed on the active region.