| 摘要 |
Semiconductor devices having an elevated contact region and methods of fabricating the same are disclosed. A disclosed semiconductor device includes a semiconductor substrate, a gate on the semiconductor substrate, spacers on sidewalls of the gate, an epitaxial layer on the semiconductor substrate, source/drain regions within the semiconductor substrate below the epitaxial layer, and low doping concentration regions within the semiconductor below the spacers. In an example, the spacers partially overlap onto the epitaxial layer.
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